PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
11. Revision history
Table 9.
PBSS2540E_2
Product data sheet
Document ID
PBSS2540E_2
Modifications:
PBSS2540E_1
Revision history
Release date
20091115
20050504
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Collector-emitter saturation voltage as a function of collector current; typical
values”: V
Figure 6 “Collector-emitter saturation voltage as a function of collector current; typical
values”: V
Figure 12 “Reflow soldering
CEsat
CEsat
unit amended from mV to V
unit amended from mV to V
Rev. 02 — 15 November 2009
Data sheet status
Product data sheet
Product data sheet
footprint”: updated
40 V, 500 mA NPN low V
Change notice
-
-
PBSS2540E
Supersedes
PBSS2540E_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
9 of 11