PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
8. Package outline
9. Packing information
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
10. Soldering
PBSS2540E_2
Product data sheet
Type number
PBSS2540E
For further information and the availability of packing methods, see
Packing methods
Package
SOT416
Fig 11. Package outline SOT416 (SC-75)
Fig 12. Reflow soldering footprint
Description
4 mm pitch, 8 mm tape and reel
Reflow soldering is the only recommended soldering method.
Dimensions in mm
1.75
1.45
Rev. 02 — 15 November 2009
Dimensions in mm
0.9
0.7
2.0
1
0.85
Section
(3x)
1.8
1.4
0.6
1
[1]
40 V, 500 mA NPN low V
0.6
3
13.
solder lands
solder resist
3
0.7
2.2
1.9
2
1
1.1
Packing quantity
3000
-115
2
0.30
0.15
0.45
0.15
msa438
(3x)
0.5
solder paste
occupied area
1.5
0.95
0.60
0.25
0.10
PBSS2540E
04-11-04
CEsat
10000
-135
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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