PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 4

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
6. Thermal characteristics
PBSS2540E_2
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, mounting pad for collector 1cm
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
−5
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.75
10
−4
Table 6.
[1]
[2]
Symbol
R
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
10
−3
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
10
2
Rev. 02 — 15 November 2009
−2
10
−1
Conditions
in free air
40 V, 500 mA NPN low V
1
10
[1]
[2]
Min
-
-
PBSS2540E
CEsat
10
Typ
-
-
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa413
(s)
Max
833
500
10
3
2
.
Unit
K/W
K/W
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