MT28F004B5VG-8 TET TR Micron Technology Inc, MT28F004B5VG-8 TET TR Datasheet - Page 17

IC FLASH 4MBIT 80NS 40TSOP

MT28F004B5VG-8 TET TR

Manufacturer Part Number
MT28F004B5VG-8 TET TR
Description
IC FLASH 4MBIT 80NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F004B5VG-8 TET TR

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Notes: 1. Sequence may be repeated to erase additional blocks.
09005aef8075d1f1
MT28F004B5.fm - Rev. 4, Pub. 2/2004
Self-Timed BLOCK ERASE Sequence
STATUS REGISTER
ERASE Complete
Check (optional)
Complete Status
2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register
3. To return to the array read mode, the FFh command must be issued.
4. Refer to the ERASE SUSPEND flowchart for more information.
5. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further
6. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
Block Address
WRITE D0h,
WRITE 20h
SR7 = 1?
V
is cleared.
WRITE or ERASE operations are allowed by the CEL.
READ
Start
PP
= 5V
YES
2
3
NO
Suspend ERASE?
YES
Sequence
Suspend
NO
ERASE Resumed
4
SMART 5 BOOT BLOCK FLASH MEMORY
1
17
Start (ERASE completed)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ERASE Successful
STATUS-CHECK Sequence
SR4, 5 = 1?
Complete BLOCK ERASE
SR3 = 0?
SR5 = 0?
YES
YES
NO
YES
NO
NO
V
Command Sequence Error
BLOCK ERASE Error
PP
Error
©2002 Micron Technology, Inc.
5, 6
4Mb
6
6

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