MT28F004B5VG-8 TET TR Micron Technology Inc, MT28F004B5VG-8 TET TR Datasheet - Page 21

• Manufacturer Part Number: MT28F004B5VG-8 TET TR
• Description: IC FLASH 4MBIT 80NS 40TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT28F004B5VG-8 TET TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8)
• Speed: 80ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 40-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Commercial Temperature (0ºC ≤ T
Notes: 1. OE# may be delayed by
09005aef8075d1f1
MT28F004B5.fm - Rev. 4, Pub. 2/2004
AC CHARACTERISTICS
PARAMETER
Read cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
t
ACE -
A
≤ +70ºC) and Extended Temperature (-40ºC ≤ T
t
AOE after CE# falls before
SMART 5 BOOT BLOCK FLASH MEMORY
SYMBOL
21
t
t
t
RWH
AOE
t
t
t
t
ACE
t
AA
OD
OH
RC
RP
t
ACE is affected.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
80
60
0
-8/-8 ET
MAX
1,000
80
40
80
20
A
≤ +85ºC); V
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
CC
©2002 Micron Technology, Inc.
= +5V ±10%
4Mb
NOTES
1
1