MT28F004B5VG-8 TET TR Micron Technology Inc, MT28F004B5VG-8 TET TR Datasheet - Page 25

• Manufacturer Part Number: MT28F004B5VG-8 TET TR
• Description: IC FLASH 4MBIT 80NS 40TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT28F004B5VG-8 TET TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8)
• Speed: 80ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 40-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: WE#- (CE#-)CONTROLLED WRITES
Commercial Temperature (0ºC ≤ T
+5V ±5%
WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS
Notes: 1. Measured with V
09005aef8075d1f1
MT28F004B5.fm - Rev. 4, Pub. 2/2004
AC CHARACTERISTICS
PARAMETER
PARAMETER
WRITE cycle time
WE# HIGH pulse width
WE# pulse width
Address setup time to WE# HIGH
Address hold time from WE# HIGH
Data setup time to WE# HIGH
Data hold time from WE# HIGH
CE# setup time to WE# LOW
CE# hold time from WE# HIGH
V
RP# HIGH to WE# LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Main BLOCK WRITE time (byte mode)
Main BLOCK WRITE time (word mode)
PP
PP
setup time to WE# HIGH
hold time from status data valid
2. RP# should be held at V
3. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
4. Polling status register before
5.
6. Typical values measured at T
7. Assumes no system overhead.
8. Typical WRITE times use checkerboard data pattern.
HH
HH
t
or WP# HIGH setup time to WE# HIGH
or WP# HIGH hold time from status data valid
REL is required to relock boot block after WRITE or ERASE to boot block.
PP
= V
PPH
HH
A
= 5V.
or WP# held HIGH until boot block WRITE or ERASE is complete.
≤ +70ºC) and Extended Temperature (-40ºC ≤ T
A
t
= +25ºC.
WB is met may falsely indicate WRITE or ERASE completion.
SMART 5 BOOT BLOCK FLASH MEMORY
25
t
WPH (
t
SYMBOL
t
t
CH (
WP (
CS (
t
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
t
VPS1
t
t
t
t
RHH
t
t
VPH
t
RHS
WC
WB
REL
AH
DH
AS
DS
RS
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WS)
WH)
t
t
CPH)
CP)
1,000
MIN
TYP
200
100
100
100
500
200
4.5
0.5
1.5
80
30
50
50
50
0
0
0
0
0
0
1
1
-8/-8 ET
A
≤ +85ºC); V
MAX
MAX
100
14
7
–
–
UNITS
UNITS
CC
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
s
s
s
s
©2002 Micron Technology, Inc.
= +5V ±10% or
4Mb
NOTES
NOTES
6, 7, 8
6, 7, 8
2, 3
1
2
3
3
3
4
3
5
6
6
2