MT48V8M16LFB4-10:G Micron Technology Inc, MT48V8M16LFB4-10:G Datasheet - Page 69

• Manufacturer Part Number: MT48V8M16LFB4-10:G
• Description: IC SDRAM 128MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48V8M16LFB4-10:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 48:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
A10
CLK
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
Read – Full-Page Burst
t CKH
t CMH
t AH
t AH
t AH
t CK
t RCD
Notes:
T1
NOP
1. For this example, CL = 2.
2. x16: A9 and A11 = “Don’t Care.”
3. Page left open; no
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CMH
t CH
CAS Latency
T3
NOP
t LZ
t AC
t
RP.
T4
D
NOP
OUT
t OH
512 (x16) locations within same row
m
69
t AC
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
D
T5
OUT
NOP
t OH
m+1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t AC
D
T6
OUT
128Mb: x16, x32 Mobile SDRAM
NOP
t OH
t AC
m+2
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Tn + 1
D
NOP
OUT
t OH
m-1
t AC
©2001 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
3
Timing Diagrams
D
OUT
UNDEFINED
t OH
m
t AC
Tn + 3
D
OUT
NOP
t OH
m+1
t HZ
DON’T CARE
Tn + 4
NOP