M29W640FT70ZA6E NUMONYX, M29W640FT70ZA6E Datasheet - Page 13

IC FLASH 64MBIT 70NS 48TFBGA

M29W640FT70ZA6E

Manufacturer Part Number
M29W640FT70ZA6E
Description
IC FLASH 64MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640FT70ZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5034
497-5034

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640FT70ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M29W640FT70ZA6E
Manufacturer:
ST
0
2.9
2.10
2.11
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if V
if RP is at V
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V
least t
ready for Bus Read and Bus Write operations after t
See the Ready/Busy Output section,
characteristics
details.
Holding RP at V
and Erase operations on all blocks will be possible. The transition from V
slower than t
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, V
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See
characteristics
details.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus
modes of the memory. When Byte/Word Organization Select is Low, V
x8 mode, when it is High, V
PLPX
OL
. After Reset/Block Temporary Unprotect goes High, V
. Ready/Busy is high-impedance during Read mode, Auto Select mode and
ID
PHPHH
PP
.
and
and
/WP is at V
ID
will temporarily unprotect the protected Blocks in the memory. Program
.
Figure 12: Reset/Block Temporary Unprotect AC
Figure 12: Reset/Block Temporary Unprotect AC
IL
IH
, then the two outermost boot blocks will remain protected even
, the memory is in x16 mode.
Table 17: Reset/Block Temporary Unprotect AC
Table 17: Reset/Block Temporary Unprotect AC
PHEL
or t
RHEL
IH
, whichever occurs last.
, the memory will be
waveforms, for more
waveforms, for more
IL
, the memory is in
IH
to V
ID
must be
IL
, for at
13/71

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