M29W640FT70ZA6E NUMONYX, M29W640FT70ZA6E Datasheet - Page 58

• Manufacturer Part Number: M29W640FT70ZA6E
• Description: IC FLASH 64MBIT 70NS 48TFBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640FT70ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5034; 497-5034

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Table 24.
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 25.
1Bh
1Ch
1Dh 3Ah 00B5h
1Eh 3Ch 00C5h
x16
1Fh 3Eh
20h
21h
22h
23h
24h
25h
26h
x16
10h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
11h
Address
Address
4Ch
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
2Ch 0000h
2Ah
2Eh
20h
22h
24h
26h
28h
30h
32h
34h
x8
000Ah Typical timeout per individual Block Erase = 2
0027h
0036h
0004h Typical timeout per single byte/word program = 2
0000h Typical timeout for minimum size write buffer program = 2
0000h Typical timeout for full Chip Erase = 2
0004h Maximum timeout for byte/word program = 2
0000h Maximum timeout for write buffer program = 2
0003h Maximum timeout per individual Block Erase = 2
0000h Maximum timeout for Chip Erase = 2
CFI Query Identification String
CFI Query System Interface Information
Data
0051h
0052h Query Unique ASCII String "QRY"
0059h
0002h Primary Algorithm Command Set and Control Interface ID code
0000h
0040h Address for Primary Algorithm extended Query table (see
0000h Alternate Vendor Command Set and Control Interface ID Code
0000h
0000h
0000h
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
16 bit ID code defining a specific algorithm
Table
second vendor - specified algorithm supported
Address for Alternate Algorithm extended Query table
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
27)
Description
Description
(1)
n
n
times typical
ms
n
n
n
times typical
ms
times typical
n
n
times typical
μs
n
μs
Compatible
256μs
Value
11.5V
12.5V
16μs
P = 40h
2.7V
3.6V
NA
NA
NA
NA
Value
1s
8s
AMD
“Q”
"R"
"Y"
NA
NA