M29W640FT70ZA6E NUMONYX, M29W640FT70ZA6E Datasheet - Page 29

• Manufacturer Part Number: M29W640FT70ZA6E
• Description: IC FLASH 64MBIT 70NS 48TFBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640FT70ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5034; 497-5034

Table 8.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency time
Program (Byte or Word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency time
Program/Erase Cycles (per Block)
Data Retention
Program, Erase times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
0.8
80
10
10
10
10
80
40
20
10
(1)(2)
Max
400
200
200
200
200
400
200
100
50
50
6
4
(4)
(4)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
μs
μs
μs
μs
μs
μs
s
s
s
s
s
s
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