M29W640FT70ZA6E NUMONYX, M29W640FT70ZA6E Datasheet - Page 59

IC FLASH 64MBIT 70NS 48TFBGA

M29W640FT70ZA6E

Manufacturer Part Number
M29W640FT70ZA6E
Description
IC FLASH 64MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640FT70ZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5034
497-5034

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640FT70ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M29W640FT70ZA6E
Manufacturer:
ST
0
Table 26.
1. For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase
2Ch
2Dh
3Ch
2Ah
2Bh
2Eh
2Fh
3Ah
3Bh
x16
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Block Region 2 from address 008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase
Block Region 2 from address 3F8000h to 3FFFFFh.
Address
5Ch
6Ch
4Eh
5Ah
5Eh
6Ah
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
Device Geometry Definition
0017h Device Size = 2
0002h
0000h
0004h
0000h
0002h
0007h
0000h
0020h
0000h
007Eh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of Erase Blocks of identical size= 007Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
Region 3 Information
Number of Erase Blocks of identical size=007Fh+1
Region 3 Information
Block size in Region 3 = 0000h * 256 byte
Region 4 Information
Number of Erase Blocks of Identical size=007Fh+1
Region 4 Information
Block size in Region 4 = 0000h * 256 byte
n
in number of bytes
(1)
Description
n
16 Bytes
8 MByte
64Kbyte
x8, x16
8Kbyte
Async.
Value
127
2
8
0
0
0
0
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