MC9S12HZ128CAL Freescale Semiconductor, MC9S12HZ128CAL Datasheet - Page 112

• Manufacturer Part Number: MC9S12HZ128CAL
• Description: IC MCU 16BIT 128K FLASH 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12HZ128CAL

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, I²C, SCI, SPI
• Peripherals: LCD, Motor control PWM, POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: S12H
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 6 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 85
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 3 2 Kbyte EEPROM Module (EETS2KV1)
3.4.1.3
Table 3-10
the EEPROM array.
The sector modify command (0x60) is a two-step command which first erases a sector (2 words) of the
EEPROM array and then re-programs one of the words in that sector. The EEPROM sector which is erased
by the sector modify command is the sector containing the address of the aligned array write which starts
the valid command sequence. That same address is re-programmed with the data which is written. By
launching a sector modify command and then pipelining a program command it is possible to completely
replace the contents of an EEPROM sector.
3.4.1.4
The ACCERR flag will be set during the command write sequence if any of the following illegal
operations are performed causing the command write sequence to immediately abort:
112
ECMD
0x05
0x20
0x40
0x41
0x60
1. Writing to the EEPROM address space before initializing ECLKDIV.
2. Writing a misaligned word or a byte to the valid EEPROM address space.
3. Writing to the EEPROM address space while CBEIF is not set.
4. Writing a second word to the EEPROM address space before executing a program or erase
5. Writing to any EEPROM register other than ECMD after writing a word to the EEPROM address
6. Writing a second command to the ECMD register before executing the previously written
7. Writing an invalid command to the ECMD register in normal mode.
8. Writing to any EEPROM register other than ESTAT (to clear CBEIF) after writing to the command
command on the previously written word.
space.
command.
register (ECMD).
Sector Modify
summarizes the valid EEPROM commands. Also shown are the effects of the commands on
Sector Erase
Erase Verify
Mass Erase
Meaning
Valid EEPROM Commands
Illegal EEPROM Operations
Program
An EEPROM word must be in an erased state before being programmed.
Cumulative programming of bits within a word is not allowed.
Verify all memory bytes of the EEPROM array are erased. If the array is erased, the BLANK bit
will set in the ESTAT register upon command completion.
Program a word (two bytes).
Erase two words (four bytes) of EEPROM array.
Erase all of the EEPROM array. A mass erase of the full array is only possible when EPDIS and
EPOPEN are set.
Erase two words of EEPROM, re-program one word.
Table 3-10. Valid EEPROM Commands
MC9S12HZ256 Data Sheet, Rev. 2.05
CAUTION
Function on EEPROM Array
Freescale Semiconductor