MC9S12HZ128CAL Freescale Semiconductor, MC9S12HZ128CAL Datasheet - Page 95
![IC MCU 16BIT 128K FLASH 112-LQFP](/photos/12/21/122139/mc9s12hz128cal_sml.jpg)
MC9S12HZ128CAL
Manufacturer Part Number
MC9S12HZ128CAL
Description
IC MCU 16BIT 128K FLASH 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.MC9S12HZ128CAL.pdf
(692 pages)
Specifications of MC9S12HZ128CAL
Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, EBI/EMI, I²C, SCI, SPI
Peripherals
LCD, Motor control PWM, POR, PWM, WDT
Number Of I /o
85
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
S12H
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
6 KB
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
85
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S12HZ128CAL
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Chapter 3
2 Kbyte EEPROM Module (EETS2KV1)
3.1
This document describes the EETS2K module which is a 2 Kbyte EEPROM (nonvolatile) memory. The
EETS2K block uses a small sector Flash memory to emulate EEPROM functionality. It is an array of
electrically erasable and programmable, nonvolatile memory. The EEPROM memory is organized as 1024
rows of 2 bytes (1 word). The EEPROM memory’s erase sector size is 2 rows or 2 words (4 bytes).
The EEPROM memory may be read as either bytes, aligned words, or misaligned words. Read access time
is one bus cycle for byte and aligned word, and two bus cycles for misaligned words.
Program and erase functions are controlled by a command driven interface. Both sector erase and mass
erase of the entire EEPROM memory are supported. An erased bit reads 1 and a programmed bit reads 0.
The high voltage required to program and erase is generated internally by on-chip charge pumps.
It is not possible to read from the EEPROM memory while it is being erased or programmed.
The EEPROM memory is ideal for data storage for single-supply applications allowing for field
reprogramming without requiring external programming voltage sources.
3.1.1
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the EEPROM.
3.1.2
Freescale Semiconductor
•
•
•
•
•
•
•
•
2 Kbytes of EEPROM memory
Minimum erase sector of 4 bytes
Automated program and erase algorithms
Interrupts on EEPROM command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline
Flexible protection scheme for protection against accidental program or erase
Single power supply program and erase
Introduction
Glossary
Features
An EEPROM word must be in the erased state before being programmed.
Cumulative programming of bits within a word is not allowed.
MC9S12HZ256 Data Sheet, Rev. 2.05
CAUTION
95
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