R5F2121AJFP#U0 Renesas Electronics America, R5F2121AJFP#U0 Datasheet - Page 429

• Manufacturer Part Number: R5F2121AJFP#U0
• Description: MCU FLASH 96K 5K CMOS 48-LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/2x/21r

Specifications of R5F2121AJFP#U0

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: POR, Voltage Detect, WDT
• Number Of I /o: 41
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 5K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/20 Group, R8C/21 Group
Rev.2.00 Aug 27, 2008
REJ09B0250-0200
Table 20.5
NOTES:
−
−
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. MInimum endurance to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
5. In a system that executes multiple programming operations, the actual erasure endurance can be reduced by writing to
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125 ° C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times.
For example, if 1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance still stands at one. However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
are the same as that in program ROM.
sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For
example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to
128 groups before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B
can further reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block
and limit the number of erase operations to a certain number.
least three times until the erase error does not occur.
CC
Program/erase endurance
Byte program time
(Program/erase endurance ≤ 1,000 times)
Byte program time
(Program/erase endurance > 1,000 times)
Block erase time
(Program/erase endurance ≤ 1,000 times)
Block erase time
(Program/erase endurance > 1,000 times)
Time delay from suspend request until
erase suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
= 2.7 to 5.5 V at Topr = -40 to 85 ° C (J version) / -40 to 125 ° C (K version), unless otherwise specified.
Flash Memory (Data Flash Block A, Block B) Electrical Characteristics
(9)
Parameter
Page 411 of 458
(2)
Ambient temperature = 55 ° C
Conditions
10,000
Min.
650
2.7
2.7
-40
20
−
−
−
−
−
0
−
(3)
20. Electrical Characteristics
Typ.
0.2
0.3
Standard
50
65
−
−
−
−
−
−
−
−
−
97 + CPU clock
3 + CPU clock
×
×
(4)
Max.
6 cycle
4 cycle
85
400
5.5
5.5
−
−
9
−
−
−
−
(8)
times
year
Unit
µ s
µ s
µ s
µ s
ns
µ s
° C
V
V
s
s