DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 613

MCU 5V 128K 100-TQFP

DF2345TE20

Manufacturer Part Number
DF2345TE20
Description
MCU 5V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2345TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2345TE20
HD64F2345TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2345TE20V
Manufacturer:
Renesas
Quantity:
222
Part Number:
DF2345TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
17.10.3 Error Protection
In error protection, an error is detected when MCU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in
FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. When the FLER bit is set to 1, it is not possible to re-enter the program mode or erase
mode by resetting the P and E bits of FLMCR1. However, setting of the PV and EV bits of
FLMCR1 is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
Error protection is released only by a reset and in hardware standby mode.
Figure 17.23 shows the flash memory state transition diagram.
When flash memory is read during programming/erasing (including a vector read or instruction
fetch)
Immediately after exception handling (excluding a reset) during programming/erasing
When a SLEEP instruction (including software standby) is executed during
programming/erasing
When the CPU loses the bus during programming/erasing
Rev. 4.00 Feb 15, 2006 page 587 of 900
REJ09B0291-0400
Section 17 ROM

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