DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 620

MCU 5V 128K 100-TQFP

DF2345TE20

Manufacturer Part Number
DF2345TE20
Description
MCU 5V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2345TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2345TE20
HD64F2345TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2345TE20V
Manufacturer:
Renesas
Quantity:
222
Part Number:
DF2345TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
17.13.3 Writer Mode Operation
Table 17.20 shows how the different operating modes are set when using writer mode, and table
17.21 lists the commands used in writer mode. Details of each mode are given below.
Table 17.20 Settings for Each Operating Mode in Writer Mode
Mode
Read
Output disable
Command write
Chip disable *
Legend:
H:
L:
X:
Hi-Z: High impedance
Notes: 1. Chip disable is not a standby state; internally, it is an operation state.
Rev. 4.00 Feb 15, 2006 page 594 of 900
REJ09B0291-0400
Memory Read Mode
Memory read mode supports byte reads.
Auto-Program Mode
Auto-program mode supports programming of 128 bytes at a time. Status polling is used to
confirm the end of auto-programming.
Auto-Erase Mode
Auto-erase mode supports automatic erasing of the entire flash memory. Status polling is used
to confirm the end of auto-erasing.
Status Read Mode
Status polling is used for auto-programming and auto-erasing, and normal termination can be
confirmed by reading the FO
error occurs.
High level
Low level
Don’t care
2. Ain indicates that there is also address input in auto-program mode.
3. For command writes when making a transition to auto-program or auto-erase mode,
input a high level to the FWE pin.
1
FWE
H or L
H or L
H or L *
H or L
3
6
CE
CE
CE
CE
L
L
L
H
signal. In status read mode, error information is output if an
H
OE
OE
OE
OE
L
H
X
Pin Names
WE
WE
H
H
L
X
WE
WE
FO
Data output
Hi-Z
Data input
Hi-Z
0
to FO
7
FA
Ain *
X
Ain *
X
0
to FA
2
2
16

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