DF2166VTE33 Renesas Electronics America, DF2166VTE33 Datasheet - Page 738

• Manufacturer Part Number: DF2166VTE33
• Description: MCU FLASH 3V 512K 33MHZ 144TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2166VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

12. The programming program that includes the initialization routine and the erasing program that
13. While an instruction in on-chip RAM is being executed, the DTC can write to the SCO bit in
14. A programming/erasing program for flash memory used in the conventional H8S F-ZTAT
15. Unlike the conventional H8S F-ZTAT microcomputer, no countermeasures are available for a
Rev. 3.00, 03/04, page 696 of 830
key code area in programmer mode, a verification error will occur unless a software
countermeasure is taken for the PROM programmer and the version of its program.
includes the initialization routine are each 2 kbytes or less. Accordingly, when the CPU clock
frequency is 33 MHz, the download for each program takes approximately 120 µs at the
maximum.
FCCS that is used for a download request or FMATS that is used for MAT switching. Make
sure that these registers are not accidentally written to, otherwise an on-chip program may be
downloaded and damage RAM or a MAT switchover may occur and the CPU get out of
control. Do not use DTC to program flash related registers.
microcomputer which does not support download of the on-chip program by a SCO transfer
request cannot run in this LSI. Be sure to download the on-chip program to execute
programming/erasing of flash memory in this LSI.
runaway by WDT during programming/erasing. Prepare countermeasures (e.g. use of the
periodic timer interrupts) for WDT with taking the programming/erasing time into
consideration as required.