DF2166VTE33 Renesas Electronics America, DF2166VTE33 Datasheet - Page 856

MCU FLASH 3V 512K 33MHZ 144TQFP

DF2166VTE33

Manufacturer Part Number
DF2166VTE33
Description
MCU FLASH 3V 512K 33MHZ 144TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2166VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
106
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
• H8S/2167
Notes: 1. Programming and erase time depends on the data.
Rev. 3.00, 03/04, page 814 of 830
Item
Programming time*
Erase time*
Programming time
(total)*
Erase time (total)*
Programming and
Erase time (total)*
Reprogramming
count*
Data retention time*
5
1
*
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
4. This value indicates the characteristics while the flash memory is reprogrammed within
5. Reprogramming count in each erase block.
2
*
4
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
the specified range (including the minimum number).
1
*
2
*
4
1
1
*
*
1
2
2
*
4
*
*
2
4
4
*
4
Symbol
t
t
Σ t
Σ t
Σ t
N
t
P
E
DRP
WEC
P
E
PE
Min.
100*
10
3
Typ.
3
80
500
1000
7.5
7.5
15
1000
Max.
30
800
5000
10000
22.5
22.5
45
Unit
ms/128 bytes
ms/4-kbyte block
ms/32-kbyte block
ms/64-kbyte block
s/384 kbytes
s/384 kbytes
s/384 kbytes
Times
Years
Ta = 25°C
Ta = 25°C
Test
Conditions
Ta = 25°C

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