AT91SAM9261SB-CU-999 Atmel, AT91SAM9261SB-CU-999 Datasheet - Page 208

• Manufacturer Part Number: AT91SAM9261SB-CU-999
• Description: IC MCU ARM9 ULTRA LP 217LFBGA
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM9261SB-CU-999

• Core Processor: ARM9
• Core Size: 16/32-Bit
• Speed: 190MHz
• Connectivity: EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: DMA, LCD, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: ROM
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 1.08 V ~ 1.32 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 217-LFBGA
• Processor Series: AT91SAMx
• Core: ARM926EJ-S
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: 2-Wire, I2S, SPI, USB
• Maximum Clock Frequency: 190 MHz
• Number Of Programmable I/os: 96
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-ARM-2M, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: AT91SAM-ICE, AT91-ISP, AT91SAM9261-EK
• Minimum Operating Temperature: - 40 C
• For Use With: AT91SAM9261-EK - KIT EVAL FOR AT91SAM926EJ-SAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

Figure 23-2. Write Burst, 32-bit SDRAM Access
SDRAMC_A[12:0]
23.5.2
6242E–ATARM–11-Sep09
D[31:0]
SDWE
SDCS
SDCK
RAS
CAS
SDRAM Controller Read Cycle
Row n
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
RP
) and between active and read command (t
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
218. This is described in
col d
Dnd
col e
Dne
RCD
col f
Dnf
). These two parameters are set in the config-
col g
Dng
Figure 23-2
col h
Dnh
AT91SAM9261S
col i
Dni
below.
col j
Dnj
RP
) commands and
col k
Dnk
“SDRAMC
col l
Dnl
208