FDZ3N513ZT Fairchild Semiconductor, FDZ3N513ZT Datasheet - Page 3

• Manufacturer Part Number: FDZ3N513ZT
• Description: MOSFET N-CH 30V WLCSP 2X2
• Manufacturer: Fairchild Semiconductor

Specifications of FDZ3N513ZT

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 462 mOhms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 5.5 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ3N513ZTTR

©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
Typical Characteristics
2.0
1.5
1.0
0.5
1.5
1.0
0.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
0.5
0
2
0
Figure 1.
-75
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
I
-50
D
GS
= 4.5 V
vs Junction Temperature
V
0.5
= 0.3 A
DS
= 4.5 V
= 5 V
V
V
-25
T
GS
DS
On Region Characteristics
J
,
, GATE TO SOURCE VOLTAGE (V)
V
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
GS
1.0
1.0
T
0
J
= 2.5 V
= 150
V
GS
25
V
= 3.5 V
μ
o
1.5
GS
C
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 1.5 V
50
T
T
J
J
= -55
= 25°C unless otherwise noted
2.0
1.5
75
o
T
C
J
= 25
100 125 150
o
C )
2.5
o
C
μ
s
3.0
2.0
3
1600
1400
1200
1000
0.1
800
600
400
2.0
1.8
1.6
1.4
1.2
1.0
2
1
0.2
Figure 2.
0
Figure 4.
0.0
0.5
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
= 25
1.0
= 0 V
SD
V
T
0.4
, BODY DIODE FORWARD VOLTAGE (V)
GS
J
Normalized On-Resistance
o
V
= 150
C
On-Resistance vs Gate to
= 4.5 V
0.5
GS
I
1.5
Source Voltage
D
Source to Drain Diode
,
,
DRAIN CURRENT (A)
GATE TO SOURCE VOLTAGE (V)
o
C
0.6
2.0
V
GS
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1.0
2.5
= 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
= 125
0.8
I
3.0
o
D
C
V
T
= 0.3 A
J
GS
= -55
T
= 1.8 V
J
1.5
3.5
= 25
1.0
o
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V
C
GS
o
C
= 2.5 V
4.0
μ
μ
s
s
1.2
2.0
4.5