FDZ3N513ZT Fairchild Semiconductor, FDZ3N513ZT Datasheet - Page 5

• Manufacturer Part Number: FDZ3N513ZT
• Description: MOSFET N-CH 30V WLCSP 2X2
• Manufacturer: Fairchild Semiconductor

Specifications of FDZ3N513ZT

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 462 mOhms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 5.5 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ3N513ZTTR

©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
Typical Characteristics
1000
0.001
100
0.01
0.1
10
0.1
1
10
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
10
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
J
= 25°C unless otherwise noted
SINGLE PULSE
R
θ
10
JA
10
-2
= 260
-2
o
C/W
t, RECTANGULAR PULSE DURATION (s)
t, PULSE WIDTH (s)
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
SINGLE PULSE
R
T
θJA
100
A
θ
t
JA
1
= 25
+ T
t
= 260
2
A
o
C
o
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C/W
1000
1000