FDZ3N513ZT Fairchild Semiconductor, FDZ3N513ZT Datasheet - Page 6

• Manufacturer Part Number: FDZ3N513ZT
• Description: MOSFET N-CH 30V WLCSP 2X2
• Manufacturer: Fairchild Semiconductor

Specifications of FDZ3N513ZT

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 462 mOhms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 5.5 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ3N513ZTTR

Dimensional Outline and Pad Layout
Product Specific Dimensions
Product
D
E
X
Y
FDZ3N513ZTUCX
1.000 +/-0.030
1.000 +/-0.030
0.018
0.018
©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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FDZ3N513ZT Rev. C