APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet

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APT100GT120JRDQ4

Manufacturer Part Number
APT100GT120JRDQ4
Description
IGBT 1200V 123A 570W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT120JRDQ4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
123A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
7.85nF @ 25V
Power - Max
570W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT120JRDQ4MI
APT100GT120JRDQ4MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT120JRDQ4
Manufacturer:
MSC
Quantity:
1 200
Part Number:
APT100GT120JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT100GT120JRDQ4
Quantity:
119
The Thunderbolt IGBT
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
• RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
Low EMI, High Reliability
T
V
V
V
SSOA
R
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
T
G(int)
CM
CES
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Integrated Gate Resistor
®
is a new generation of high voltage power IGBTs. Using
Thunderbolt IGBT
1
CE
CE
CE
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
Microsemi Website - http://www.microsemi.com
= V
= 1200V, V
= 1200V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
, I
= 100°C
= 25°C
J
= ±20V)
= 150°C
C
= 4mA, T
®
GE
GE
GE
®
C
C
= 0V, I
offers superior rugged-
= 100A, T
= 100A, T
= 0V, T
= 0V, T
j
= 25°C)
C
= 5mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
APT100GT120JRDQ4
C
1200V, 100A, V
= 25°C unless otherwise specified.
1200
Min
4.5
2.7
-
-
-
-
-
200A @ 1200V
-55 to 150
Ratings
ISOTOP
1200
±20
123
200
570
300
67
Typ
5.5
3.2
4.0
5
-
-
-
-
CE(ON)
®
.
Max
TBD
"UL Recognized"
200
600
6.5
3.7
= 3.2V Typical
file # E145592
-
-
-
Amps
Watts
Unit
Volts
°C
Unit
Volts
μA
nA
Ω

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APT100GT120JRDQ4 Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT100GT120JRDQ4 1200V, 100A 3.2V Typical CE(ON) "UL Recognized" ISOTOP ® file # E145592 = 25°C unless otherwise specified. C Ratings Unit 1200 Volts ±20 123 67 Amps 200 200A @ 1200V 570 Watts -55 to 150 ° ...

Page 2

... T = 150° 100μ 1200V CE Inductive Switching (25° 800V 15V 100A 4.7Ω +25° Inductive Switching (125° 800V 15V 100A 4.7Ω 125° APT100GT120JRDQ4 Min Typ Max - 7850 - - 650 - - 275 - - 10 685 - - 400 - , V = 15V, GE 150 - 100 - - 630 - - TBD - - 17600 - ...

Page 3

... 25° 200A C = 50A FIGURE 6, On State Voltage vs Junction Temperature 120 100 75 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT100GT120JRDQ4 15V 13V 12V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° 100A V = 240V 25°C ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 80000 E 200A on2, 70000 60000 50000 40000 30000 20000 E 100A 10000 100A off, E 50A on2, E 50A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT120JRDQ4 V =15V,T =125° =15V,T =25° 800V CE 4.7Ω 100µ 120 ...

Page 5

... FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE 0.1 RECTANGULAR PULSE DURATION (SECONDS 75°C T (° .039 10 17. COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT120JRDQ4 0 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ ° 125 C J ° ...

Page 6

... Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions 97.34V 0.000V ∆97.34V Collector Voltage APT100GT120JRDQ4 a -46.0ns 780.4V b 422ns 34.13V Gate Voltage ∆468ns ∆746. 125°C J Collector Current 90% 5% 10% Collector Voltage ...

Page 7

... T = 125° SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) T (°C) J 0.148 0.238 0.174 0.006 0.0910 0.524 FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT100GT120JRDQ4 = 25°C unless otherwise specified. C APT100GT120JRDQ4 60 73 540 Min Type Max 2.8 3.48 2.17 Min Typ Max 265 - - 560 - - 5 ...

Page 8

... Figure 28. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 30. Maximum Average Forward Current vs. CaseTemperature 100 200 APT100GT120JRDQ4 T = 125°C J 120A V = 800V R 60A 30A 0 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE(A/µ 125°C ...

Page 9

I - Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, measured from ...

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