APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet - Page 9

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APT100GT120JRDQ4

Manufacturer Part Number
APT100GT120JRDQ4
Description
IGBT 1200V 123A 570W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT120JRDQ4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
123A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
7.85nF @ 25V
Power - Max
570W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT120JRDQ4MI
APT100GT120JRDQ4MI

Available stocks

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Quantity
Price
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Part Number:
APT100GT120JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
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Part Number:
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Quantity:
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Microsemi’s prod
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
r = 4.0 (.157)
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
(2 places)
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
RRM
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP
passes through zero.
Dimensions in Millimeters and (Inches )
RRM
Figure 32, Diode Test Circuit
and t rr .
di
* Emitter/Anode
* Emitter/Anode
3.3 (.129)
3.6 (.143)
F
/dt Adjust
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
®
) Package Outline
30µH
Zero
V r
APT10035LLL
1
1.95 (.077)
2.14 (.084)
TRANSFORMER
PEARSON 2878
CURRENT
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
2
D.U.T.
Collector/Cathode
Gate
Hex Nut M4
*
(4 places)
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
12.6 (.496)
12.8 (.504)
3
4
5
APT100GT120JRDQ2
25.2 (0.992)
25.4 (1.000)
t rr / Q rr
Waveform
0.25 I RRM

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