APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet - Page 6

• Manufacturer Part Number: APT100GT120JRDQ4
• Description: IGBT 1200V 123A 570W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT100GT120JRDQ4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 123A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 7.85nF @ 25V
• Power - Max: 570W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT120JRDQ4MI; APT100GT120JRDQ4MI

Figure 23, Turn-off Switching Waveforms and Definitions
90%
Figure 21, Inductive Switching Test Circuit
V
CC
t
Switching Energy
d(off)
90%
I
10%
C
T
t
f
J
D.U.T.
Gate Voltage
= 125°C
V
CE
APT100DQ120
Collector Current
A
0
a -226ns
∆1.15μs
b 928ns
Collector Voltage
∆97.34V
0.000V
97.34V
Switching Energy
t
Figure 22, Turn-on Switching Waveforms and Definitions
d(on)
10%
5%
t
r
10%
90%
5%
Gate Voltage
APT100GT120JRDQ4
T
J
a -46.0ns
∆468ns
b 422ns
Collector Current
= 125°C
Collector Voltage
∆746.3V
34.13V
780.4V