APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet - Page 3

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APT100GT120JRDQ4

Manufacturer Part Number
APT100GT120JRDQ4
Description
IGBT 1200V 123A 570W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT120JRDQ4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
123A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
7.85nF @ 25V
Power - Max
570W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT120JRDQ4MI
APT100GT120JRDQ4MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT120JRDQ4
Manufacturer:
MSC
Quantity:
1 200
Part Number:
APT100GT120JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT100GT120JRDQ4
Quantity:
119
Typical Performance Curves
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
150
125
100
150
125
100
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
75
50
25
75
50
25
0
8
7
6
5
4
3
2
1
0
0
-.50 -.25
FIGURE 1, Output Characteristics (T
V
0
0
8
CE
V
T
GE
<0.5 % DUTY CYCLE
250µs PULSE TEST
TEST<0.5 % DUTY
T
J
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
V
V
= 125°C
J
FIGURE 3, Transfer Characteristics
= 15V
250µs PULSE
J
GE
= 25°C
9
1
= 125°C
GE
2
T
CYCLE
J
, GATE-TO-EMITTER VOLTAGE (V)
T
, GATE-TO-EMITTER VOLTAGE (V)
= 25°C.
J
T
, JUNCTION TEMPERATURE
10
T
0
2
J
= 25°C
J
4
= -55°C
25
3
11
6
12
50
4
I
C
I
C
8
= 100A
T
= 50A
75
13
5
J
= 150°C
10
100 125
14
6
I
C
= 200A
J
12
15
7
= 25°C)
16
150
14
8
250
200
150
100
120
100
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
16
14
12
10
50
80
60
40
20
0
7
6
5
4
3
2
1
0
8
6
4
2
0
0
FIGURE 2, Output Characteristics (T
V
0
25
0
0
CE
<0.5 % DUTY CYCLE
250µs PULSE TEST
I
T
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
J
= 100A
= 25°C
15V
100
I
C
V
25
5
GE
= 200A
50
= 15V.
T
T
J
C
, Junction Temperature (°C)
200
FIGURE 4, Gate charge
13V
, Case Temperature (°C)
GATE CHARGE (nC)
10
50
I
C
75
12V
= 100A
300
V
V
15
75
CE
CE
11V
400
= 600V
= 240V
100
100
APT100GT120JRDQ4
I
C
20
10V
500
= 50A
V
9V
125
CE
125
25
J
600
= 960V
= 25°C)
8V
7V
150
700
150
30

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