APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet - Page 2

• Manufacturer Part Number: APT100GT120JRDQ4
• Description: IGBT 1200V 123A 570W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT100GT120JRDQ4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 123A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 7.85nF @ 25V
• Power - Max: 570W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT120JRDQ4MI; APT100GT120JRDQ4MI

Dynamic Characteristic
Thermal and Mechanical Characteristics
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Symbol Characteristic / Test Conditions
SSOA
V
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
V
t
t
t
t
E
E
E
E
C
C
C
Q
Q
R
R
d(on)
d(off)
E
d(on)
d(off)
E
Isolation
Q
on1
on2
off
G
W
GEP
t
t
on1
on2
t
t
on1
on2
oes
res
θ
θ
ies
ge
off
off
gc
r
f
r
f
g
is external gate resistance not including gate driver impedance.
JC
JC
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
T
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages.
(50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
6
6
4
4
5
5
T
J
= 150°C, R
Inductive Switching (125°C)
Inductive Switching (25°C)
L = 100μH, V
V
GE
Test Conditions
Gate Charge
= 0V, V
V
T
V
T
V
V
V
V
R
R
I
I
I
f = 1MHz
J
J
CC
CC
C
C
C
CE
G
GE
GE
GE
G
G
= +25°C
= 125°C
= 100A
= 100A
= 100A
= 1.0Ω
= 600V
= 4.7Ω
= 4.7Ω
= 800V
= 800V
= 15V
= 15V
= 15V
CE
CE
= 1200V
= 25V
7
, V
GE
= 15V,
2500
Min
150
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17600
22380
10950
7850
7240
TBD
TBD
10.0
Typ
650
275
685
400
100
630
100
710
APT100GT120JRDQ4
75
50
36
50
37
29.2
Typ
-
-
-
Max
Max
0.22
0.56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
°C/W
Unit
Volts
nC
pF
ns
µJ
ns
µJ
V
A
g