APT100GT120JRDQ4 Microsemi Power Products Group, APT100GT120JRDQ4 Datasheet - Page 7

• Manufacturer Part Number: APT100GT120JRDQ4
• Description: IGBT 1200V 123A 570W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT100GT120JRDQ4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 123A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 7.85nF @ 25V
• Power - Max: 570W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT120JRDQ4MI; APT100GT120JRDQ4MI

MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Typical Performance Curves
Symbol Characteristic
Symbol Characteristic / Test Conditions
Symbol Characteristic / Test Conditions
I
I
F(RMS)
I
I
I
I
RRM
F(AV)
Q
RRM
RRM
FSM
V
Q
Q
t
t
t
t
rr
rr
rr
rr
rr
F
rr
rr
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Forward Voltage
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
0.60
0.50
0.40
0.30
0.20
0.10
0
10
-5
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D = 0.9
0.7
0.3
0.1
0.5
0.05
Dissipated Power
(Watts)
10
-4
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
T
C
RECTANGULAR PULSE DURATION (seconds)
J
= 88°C, Duty Cycle = 0.5)
(°C)
J
I
= 45°C, 8.3 ms)
I
I
F
0.006
I
F
F
SINGLE PULSE
F
V
= 60A, di
V
0.148
10
= 60A, di
V
= 60A, di
= 1A, di
R
R
V
R
-3
Test Conditions
R
= 800V, T
= 800V, T
= 800V, T
= 30V, T
I
F
0.0910
= 75A, T
F
F
0.238
/dt = -100A/µs,
F
F
/dt = -1000A/µs
/dt = -200A/µs
/dt = -200A/µs
I
I
F
F
C
C
J
C
= 150A
= 25°C
All Ratings: T
= 75A
= 125°C
= 125°C
= 25°C
J
0.524
= 125°C
0.174
10
-2
T
C
(°C)
C
= 25°C unless otherwise specified.
APT100GT120JRDQ4
Min
Min
-
-
-
-
-
-
-
-
-
-
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Note:
EXT
Peak T J = P DM x Z θJC + T C
are the external thermal
Duty Factor D =
10
-1
Type
2890
4720
t 1
3.48
2.17
Typ
540
265
560
350
150
2.8
60
73
60
13
40
APT100GT120JRDQ4
5
t 2
t 1
/
t 2
Max
Max
-
-
-
-
-
-
-
-
-
-
1.0
Amps
Amps
Amps
Amps
Unit
Unit
Volts
Unit
nC
nC
nC
ns
ns
ns