FMS6G20US60S Fairchild Semiconductor, FMS6G20US60S Datasheet - Page 115
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMS6G20US60S
Manufacturer Part Number
FMS6G20US60S
Description
IGBT 600V 20A 25PM-AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMS6G20US60S
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
20A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.277nF @ 30V
Power - Max
89W
Input
Single Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G20US60S
Manufacturer:
IXYS
Quantity:
530
Part Number:
FMS6G20US60S
Quantity:
55
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Small Signal Transistors – General Purpose Transistors (Continued)
2N5366
2N4402
2N4403
TIS93
MPS6534
PN2907
PN4143
BC307
BC557
BC560
SS9015
KSA539
PN200
PN200A
BCX79
PN3644
BC327
BC636
2N5086
2N5087
BC212B
BC212LB
KSA1015
BC212
BC212L
KSB1116
KSB1116S
KSA733
MPS8598
BC327A
KSP55
MPSA55
PN4249
PN4250A
KSP8598
Products
V
CEO
40
40
40
40
40
40
40
45
45
45
45
45
45
45
45
45
45
45
50
50
50
50
50
50
50
50
50
50
60
60
60
60
60
60
60
(V)
V
CBO
40
40
40
40
40
60
60
50
50
50
50
60
60
60
45
45
50
45
50
50
60
60
50
60
60
60
60
60
60
60
60
60
60
60
60
(V)
V
EBO
4
5
5
5
4
5
5
5
5
5
5
5
6
6
5
5
5
5
3
3
5
5
5
5
5
6
6
5
5
5
4
4
5
5
5
(V)
Max (A)
0.15
150
0.5
0.6
0.6
0.8
0.8
0.8
0.8
0.1
0.1
0.1
0.1
0.2
0.5
0.5
0.5
0.8
0.8
0.1
0.1
0.1
0.1
0.3
0.3
0.5
0.5
0.5
0.5
0.5
I
1
1
1
–
–
C
Min
100
100
100
100
100
120
110
110
100
300
100
100
150
250
135
135
100
100
100
100
250
100
50
90
60
40
80
40
60
60
70
60
60
40
50
2-110
Discrete Power Products –
Max
1000
300
150
300
300
270
300
300
800
800
800
600
240
450
600
300
630
250
500
800
400
300
600
600
700
300
400
300
700
300
–
–
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
10
10
CE
1
2
2
2
1
5
5
5
5
1
1
1
1
1
2
5
5
5
5
6
5
5
2
2
6
5
1
1
1
5
5
5
(V) @I
C
150
150
100
150
150
150
100
150
100
100
100
0.1
0.1
0.1
0.1
50
50
50
10
10
10
10
10
2
2
2
1
2
2
2
2
2
1
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.75
0.75
0.25
0.65
0.65
0.25
0.25
0.25
0.25
0.3
1.6
1.6
0.3
0.7
0.5
0.4
0.4
0.4
0.7
0.5
0.3
0.3
0.6
0.6
0.3
0.6
0.6
0.3
0.3
0.3
0.4
0.7
0.4
1
@I
V
CE (sat)
1000
1000
C
500
500
100
500
500
100
100
100
150
200
200
100
150
500
500
100
100
100
100
100
100
100
500
100
100
100
50
50
10
10
10
10
10
(mA) @I
B
0.5
0.5
2.5
2.5
0.5
50
50
10
50
50
15
20
20
15
50
50
10
50
50
10
10
50
10
10
5
5
5
5
1
1
5
5
5
5
5
(mA)
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