FMS6G20US60S Fairchild Semiconductor, FMS6G20US60S Datasheet - Page 123
FMS6G20US60S
Manufacturer Part Number
FMS6G20US60S
Description
IGBT 600V 20A 25PM-AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMS6G20US60S
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
20A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.277nF @ 30V
Power - Max
89W
Input
Single Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G20US60S
Manufacturer:
IXYS
Quantity:
530
Part Number:
FMS6G20US60S
Quantity:
55
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JFETs (Continued)
BSR56
SOT-23 P-Channel
MMBFJ270
MMBFJ177
MMBFJ176
MMBFJ271
MMBFJ175
MMBF5460
MMBF5461
MMBF5462
SOT-323 N-Channel
FJX597JH
SOT-623F N-Channel
FJZ594J
SuperSOT N-Channel
MMBF5434
MMBFJ108
TO-92 N-Channel
FJN598J
J300
2N5555
2N5484
J210
2N5485
J110
J309
PN5434
J211
J107
2N5457
2N5486
J212
J109
J106
J310
Products
BV
(V)
40
30
30
30
30
30
40
40
40
20
20
25
25
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
GDS
Dissipation
Power
(mW)
250
225
225
225
225
225
225
225
225
100
100
350
350
150
350
350
350
350
350
625
625
350
350
625
625
350
350
625
625
625
P
D
Min (V)
0.75
0.5
0.8
1.5
1.8
0.3
0.5
0.5
2.5
0.5
0.5
–
–
1
–
–
–
1
4
2
4
1
3
1
3
1
1
2
2
2
Typ (V) Max (V) @ I
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
2.5
4.5
7.5
1.5
1.5
1.5
4.5
4.5
6.5
10
10
–
–
2
4
6
6
9
4
3
3
4
4
4
4
6
6
6
6
6
(off)
0.001
0.001
0.001
0.003
0.001
0.003
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
–
–
–
1
1
1
1
1
1
1
1
(µA) @ V
2-118
Discrete Power Products –
15
15
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
DS
–
–
–
5
5
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.15
0.15
100
200
1.5
0.1
50
30
80
15
10
12
30
15
40
24
2
2
6
7
1
2
4
6
1
2
4
7
1
8
0.35
0.35
0.35
I
15
20
25
50
60
16
30
15
10
30
20
20
40
60
DSS
–
–
–
–
–
–
–
–
–
5
9
5
5
DS
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
15
15
15
15
15
15
15
15
10
5
5
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
6000
8000
1.5
3.5
10
–
–
–
–
1
2
–
–
–
–
–
–
–
3
4
–
–
6
–
1
4
7
–
–
8
GFS
15000
18000
12
20
12
12
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4
5
6
6
7
5
8
300
150
R
(Ω)
250
125
25
18
10
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
8
6
DS
I
0.0002
0.003
0.003
D
(µA)
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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