FMS6G20US60S Fairchild Semiconductor, FMS6G20US60S Datasheet - Page 140
FMS6G20US60S
Manufacturer Part Number
FMS6G20US60S
Description
IGBT 600V 20A 25PM-AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMS6G20US60S
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
20A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.277nF @ 30V
Power - Max
89W
Input
Single Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G20US60S
Manufacturer:
IXYS
Quantity:
530
Part Number:
FMS6G20US60S
Quantity:
55
- Current page: 140 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Schottky Diodes and Rectifiers (Continued)
SS15
SS16
SS18
SS19
MBRS130L
MBRS140
S210
SS22
SS23
SS24
SS25
SS26
SS28
SS29
MBRS320
MBRS340
S310
SS32
SS33
SS34
SS35
SS36
SS38
SS39
MBR0520L
MBR0540
BAR43
BAR43C
BAR43S
BAT54
SMB
SMC
SOD-123
SOT-23
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Diode
Schottky Diode
Schottky Diode
Schottky Diode
Function
Configuration
Dual & Common
Dual Series
Cathode
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
I
0.75
0.75
0.75
100
100
100
100
100
100
100
100
(A)
FSM
5.5
5.5
0.6
40
40
40
50
50
50
50
80
40
40
40
50
50
50
50
80
2-135
(°C/W)
R
340
206
430
430
430
430
88
88
88
88
75
75
75
75
75
75
75
75
55
55
55
55
55
55
55
55
θJA
–
–
–
–
Discrete Power Products –
V
100
100
(V)
RRM
50
60
80
90
30
40
20
30
40
50
60
80
90
20
40
20
30
40
50
60
80
90
20
40
30
30
30
30
I
F (AV)
0.5
0.5
0.2
0.2
0.2
0.3
(A)
1
1
1
1
1
1
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
V
Diodes and Rectifiers
FM
0.395
0.525
0.385
0.85
0.85
0.85
0.85
0.85
0.85
0.75
0.75
0.85
0.85
0.51
(V)
0.7
0.7
0.6
0.5
0.5
0.5
0.7
0.7
0.5
0.5
0.5
0.5
1
1
1
1
Max
1000
1000
2000
2000
(µA) @V
200
200
400
400
400
400
500
500
500
500
200
200
400
400
400
400
500
500
500
500
250
0.5
0.5
0.5
20
2
I
RM
Max
100
100
50
80
40
20
40
60
90
20
30
50
80
40
25
25
25
25
60
90
30
30
50
80
40
20
40
60
90
20
R
(V)
Related parts for FMS6G20US60S
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: