FMS6G20US60S Fairchild Semiconductor, FMS6G20US60S Datasheet - Page 130
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMS6G20US60S
Manufacturer Part Number
FMS6G20US60S
Description
IGBT 600V 20A 25PM-AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMS6G20US60S
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
20A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.277nF @ 30V
Power - Max
89W
Input
Single Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G20US60S
Manufacturer:
IXYS
Quantity:
530
Part Number:
FMS6G20US60S
Quantity:
55
- Current page: 130 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Rectifiers – HyperFast Recovery Rectifiers
TO-220
RHRP860
RHRP1560
RHRP3060
RHRP8120
RHRP15120
RHRP30120
TO-247
RHRG1560CC
RHRG3060
RHRG3060CC
RHRG5060
RHRG30120
RHRG75120
TO-252(DPAK)
RHRD660S
Products
Common Cathode
Common Cathode
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
(V)
I
F (AV)
15
30
15
30
15
30
30
50
30
75
8
8
6
(A)
V
F
2-125
Max (V)
2.1
2.1
2.1
3.2
3.2
1.5
2.1
2.1
2.1
3.2
3.2
2.1
3
Discrete Power Products –
t
rr
Max (ns)
100
35
40
45
70
75
75
60
45
45
50
75
35
I
RM
or I
(µA)
100
100
100
100
100
250
100
100
100
250
100
250
100
R
Max
t
a
Typ (ns)
Diodes and Rectifiers
@125°C
18
20
22
30
36
35
30
22
22
25
48
60
16
t
b
Typ (ns)
@125°C
10
15
18
20
28
33
17
18
18
20
22
25
8
Related parts for FMS6G20US60S
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: