FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 2
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FDD10N20LZTM
Manufacturer Part Number
FDD10N20LZTM
Description
MOSFET N-CH 200V 7.6A DPAK-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDD10N20LZTM.pdf
(8 pages)
Specifications of FDD10N20LZTM
Input Capacitance (ciss) @ Vds
585pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
200 V
Continuous Drain Current
7.6 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDD10N20LZ Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.2mH, I
3. I
4. Pulse Test: Pulse Width 300 s, Duty cycle 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
7.6A, di/dt 200A/s, V
FDD10N20LZ
DSS
AS
= 7.6A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
BV
FDD10N20LZ
G
DSS
Device
= 25, Starting T
Parameter
, Starting T
J
T
= 25C
C
J
= 25
= 25C
o
C unless otherwise noted
Package
D-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
GS
G
F
DS
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25
= 200V, V
= 160V, T
= ±16V, V
= 25V, V
= 100V I
= 100V, I
= 0V, I
= 0V, I
= V
= 10V, I
= 5V, I
= 10V
= 20V, I
DS
Test Conditions
, I
2
D
SD
SD
Reel Size
D
D
D
= 3.8A
D
GS
GS
D
380mm
= 7.6A
= 7.6A
GS
C
= 3.8A
DS
= 250A
= 3.8A
= 7.6A
= 7.6A
= 125
= 0V
= 0V, T
= 0V
= 0V
o
C
C
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
o
C
Tape Width
16mm
Min.
200
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.30
0.32
440
115
0.5
0.2
3.5
75
11
12
10
15
55
25
8
2
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.36
0.38
±10
585
100
120
2500
7.6
1.4
2.5
10
17
16
30
30
40
60
1
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
A
A
pF
pF
pF
C
ns
ns
ns
ns
ns
V
A
A
V
V
S
o
C