FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 2

• Manufacturer Part Number: FDD10N20LZTM
• Description: MOSFET N-CH 200V 7.6A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD10N20LZTM

• Input Capacitance (ciss) @ Vds: 585pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD10N20LZ Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.2mH, I
3. I
4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
7.6A, di/dt  200A/s, V
FDD10N20LZ
DSS
AS
= 7.6A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
 BV
FDD10N20LZ
G
DSS
Device
= 25, Starting T
Parameter
, Starting T
J
T
= 25C
C
J
= 25
= 25C
o
C unless otherwise noted
Package
D-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
GS
G
F
DS
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25
= 200V, V
= 160V, T
= ±16V, V
= 25V, V
= 100V I
= 100V, I
= 0V, I
= 0V, I
= V
= 10V, I
= 5V, I
= 10V
= 20V, I
DS
Test Conditions
, I
2
D
SD
SD
Reel Size
D
D
D
= 3.8A
D
GS
GS
D
380mm
= 7.6A
= 7.6A
GS
C
= 3.8A
DS
= 250A
= 3.8A
= 7.6A
= 7.6A
= 125
= 0V
= 0V, T
= 0V
= 0V
o
C
C
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
o
C
Tape Width
16mm
Min.
200
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.30
0.32
440
115
0.5
0.2
3.5
75
11
12
10
15
55
25
8
2
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.36
0.38
±10
585
100
120
2500
7.6
1.4
2.5
10
17
16
30
30
40
60
1
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
A
A
pF
pF
pF
C
ns
ns
ns
ns
ns
V

A
A
V
V
S
o
C