FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 6
![MOSFET N-CH 200V 7.6A DPAK-3](/photos/16/7/160789/d2pak-3_sml.jpg)
FDD10N20LZTM
Manufacturer Part Number
FDD10N20LZTM
Description
MOSFET N-CH 200V 7.6A DPAK-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDD10N20LZTM.pdf
(8 pages)
Specifications of FDD10N20LZTM
Input Capacitance (ciss) @ Vds
585pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
200 V
Continuous Drain Current
7.6 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDD10N20LZ Rev. A
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
as DUT
as DUT
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
6
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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