FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 6

• Manufacturer Part Number: FDD10N20LZTM
• Description: MOSFET N-CH 200V 7.6A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD10N20LZTM

• Input Capacitance (ciss) @ Vds: 585pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD10N20LZ Rev. A
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
as DUT
as DUT
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
6
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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