FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 4

• Manufacturer Part Number: FDD10N20LZTM
• Description: MOSFET N-CH 200V 7.6A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD10N20LZTM

• Input Capacitance (ciss) @ Vds: 585pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD10N20LZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.1
1.2
1.1
1.0
0.9
0.8
50
10
1
-80
0.1
-40
vs. Temperature
T
- FDD10N20LZ
V
J
, Junction Temperature
DS
Operation in This Area
is Limited by R
1
, Drain-Source Voltage [V]
0
0.01
0.1
1
5
10
40
-5
* Notes :
0.5
0.2
0.1
0.05
Single pulse
0.02
0.01
DS(on)
1. T
2. T
3. Single Pulse
10
C
J
= 150
= 25
80
DC
10ms
Figure 11. Transient Thermal Response Curve
* Notes :
1ms
o
[
C
o
1. V
2. I
C
o
C
10
100
D
120
GS
]
-4
= 250uA
100
30

= 0V
s

s
160
- FDD10N20LZ
Rectangular Pulse Duration [sec]
300
(Continued)
10
-3
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
10
12
10
2.4
2.0
1.6
1.2
0.8
0.4
8
6
4
2
0
-2
25
-80
Limited by package
* Notes :
P
R
1. Z
2. Duty Factor, D=t
3. T
DM

JC

JM
-40
JC
= 1.5
50
vs. Temperature
T
(t) = 2.2
- T
T
C
J
vs. Case Temperature
, Junction Temperature
, Case Temperature
C
10
o
t
1
C/W
= P
t
2
-1
o
DM
0
C/W Max.
75
* Z
1
/t

2
JC
40
(t)
V
GS
100
= 10V
1
80
[
o
C
* Notes :
]
[
1. V
2. I
o
125
C
D
120
]
GS
= 3.8A
www.fairchildsemi.com
= 10V
150
160