FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 3

• Manufacturer Part Number: FDD10N20LZTM
• Description: MOSFET N-CH 200V 7.6A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD10N20LZTM

• Input Capacitance (ciss) @ Vds: 585pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD10N20LZ Rev. A
Typical Performance Characteristics
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
Figure 1. On-Region Characteristics
0.1
20
10
1.0
0.8
0.6
0.4
0.2
10
1
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
* Note:
GS
1. V
2. f = 1MHz
= 10V
GS
7V
5V
4.5V
4V
3.5V
V
Drain Current and Gate Voltage
V
DS
DS
5
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
(
C ds = shorted
10
1
1
*Notes:
V
1. 250
2. T
GS
15
)
* Note : T
C
= 10V
= 25

s Pulse Test
V
GS
o
C
10
= 20V
20
J
= 25
C
C
C
oss
rss
iss
o
C
10
30
25
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
30
10
50
10
10
1
1
8
6
4
2
0
0.4
2
0
150
V
Variation vs. Source Current
SD
and Temperature
150
o
, Body Diode Forward Voltage [V]
Q
C
V
o
g
GS
3
C
3
V
V
V
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
DS
DS
DS
0.8
= 50V
= 100V
= 160V
-55
o
25
C
o
C
4
6
* Notes :
25
1. V
2. 250
o
Notes:
1. V
2. 250
C
* Note : I
DS
1.2
GS

= 20V
s Pulse Test

= 0V
s Pulse Test
5
9
D
www.fairchildsemi.com
= 7.6A
1.6
12
6