BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 70
![MOSFET N-CH 30V S308](/photos/39/68/396873/s308_sml.jpg)
BSZ0901NS
Manufacturer Part Number
BSZ0901NS
Description
MOSFET N-CH 30V S308
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ0901NS.pdf
(148 pages)
Specifications of BSZ0901NS
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 mOhms
Drain-source Breakdown Voltage
30 V
Mounting Style
SMD/SMT
Package / Case
S308
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSZ0901NSTR
SP000854570
SP000854570
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSZ0901NS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSIATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
70
Silicon Power Diodes
DPaK (To-252)
D
2
PaK (To-263)
voltage
voltage
1200v
600v
600v
I
I
F
F
15
15
23
30
45
12
18
30
3
6
9
6
9
9
9
[a]
[a]
Q
Q
C
C
(typ.) [nC]
(typ.) [nC]
1100
1400
1200
1880
2630
118
240
343
595
360
343
585
995
970
585
I
I
102.0
F.SM
F.SM
29.5
63.0
78.0
117
162
16
29
40
60
29
40
40
60
89
[a]
[a]
IDD03E60
IDD06E60
IDD09E60
IDD15E60
IDB06E60
IDB09E60
IDB09E60
IDB15E60
IDB23E60
IDB30E60
IDB45E60
IDB09E60
IDB12E120
IDB18E120
IDB30E120
Type
Type
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Technology
Technology