BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 70

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

70
Silicon Power Diodes
DPaK (To-252)
D
2
PaK (To-263)
voltage
voltage
1200v
600v
600v
I
I
F
F
15
15
23
30
45
12
18
30
3
6
9
6
9
9
9
[a]
[a]
Q
Q
C
C
(typ.) [nC]
(typ.) [nC]
1100
1400
1200
1880
2630
118
240
343
595
360
343
585
995
970
585
I
I
102.0
F.SM
F.SM
29.5
63.0
78.0
117
162
16
29
40
60
29
40
40
60
89
[a]
[a]
IDD03E60
IDD06E60
IDD09E60
IDD15E60
IDB06E60
IDB09E60
IDB09E60
IDB15E60
IDB23E60
IDB30E60
IDB45E60
IDB09E60
IDB12E120
IDB18E120
IDB30E120
Type
Type
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Emitter Controlled Diodes
Technology
Technology