BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 81
![MOSFET N-CH 30V S308](/photos/39/68/396873/s308_sml.jpg)
BSZ0901NS
Manufacturer Part Number
BSZ0901NS
Description
MOSFET N-CH 30V S308
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ0901NS.pdf
(148 pages)
Specifications of BSZ0901NS
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 mOhms
Drain-source Breakdown Voltage
30 V
Mounting Style
SMD/SMT
Package / Case
S308
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSZ0901NSTR
SP000854570
SP000854570
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSZ0901NS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSIATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power MoSFETs ( > 300v)
Power MoSFETs ( > 300v)–CP Generation
Package Type
A = TO-220 FullPAK
B = TO-263 (D
D = TO-252 (DPAK)
I = TO-262 (I
N = SOT-223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Company
I = Infineon
Device
P = Power MOSFET
Package Type
A = TO-220 FullPAK
B = TO-263 (D
D = TO-252 (DPAK)
I = TO-262 (I
N = SO-T223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Company
S = Formerly Siemens
Device
P = Power MOSFET
I
2
S
2
2
PAK)
2
PAK)
PAK)
PAK)
P
P
P
P
60
20
R
N
099
60
Specifications
C3 = CoolMOS
S5 = CoolMOS
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Technology
N = N-Channel Transistors
Continuous Drain Current
(@ T
C
Series Name
in this case CoolMOS
PFC and PWM applications
R
R = R
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
C
DS(on)
C
= 25°C) [A]
DS(on)
[m ]
P
3
TM
TM
C3
S5
TM
CP for
81