BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 81

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

Power MoSFETs ( > 300v)
Power MoSFETs ( > 300v)–CP Generation
Package Type
A = TO-220 FullPAK
B = TO-263 (D
D = TO-252 (DPAK)
I = TO-262 (I
N = SOT-223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Company
I = Infineon
Device
P = Power MOSFET
Package Type
A = TO-220 FullPAK
B = TO-263 (D
D = TO-252 (DPAK)
I = TO-262 (I
N = SO-T223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Company
S = Formerly Siemens
Device
P = Power MOSFET
I
2
S
2
2
PAK)
2
PAK)
PAK)
PAK)
P
P
P
P
60
20
R
N
099
60
Specifications
C3 = CoolMOS
S5 = CoolMOS
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Technology
N = N-Channel Transistors
Continuous Drain Current
(@ T
C
Series Name
in this case CoolMOS
PFC and PWM applications
R
R = R
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
C
DS(on)
C
= 25°C) [A]
DS(on)
[m ]
P
3
TM
TM
C3
S5
TM
CP for
81