BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 74

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

74
Discretes IGBTs
To-220
To-220 FullPaK
voltage
voltage
1200v
1200v
600v
I
I
C
C
(max.)
(max.)
[a]
10
15
[a]
10
15
1
1
2
2
2
3
3
7
6
6
3
3
I
I
Cpuls
Cpuls
27.0
24.0
52.0
3.5
3.5
9.6
9.6
9.6
9.9
9.9
[a]
[a]
18
24
30
45
(max.)
(max.)
9
9
P
P
tot
tot
125.0
138.0
198.0
28.0
28.0
62.0
62.0
62.0
62.5
62.5
35.7
[W]
[W]
(max.)
(max.)
28
68
30
29
29
V
V
CE(sat)
CE(sat)
2.5
2.5
3.7
3.7
3.7
2.5
2.5
3.7
2.2
3.7
1.5
2.3
1.5
1.5
2.5
2.5
[v]
[v]
(typ.)
(typ.)
IGP01n120H2
IKP01n120H2
SKB02n120
SKP02n120
SGP15n120
IKa06n60T
SKa06n60
IKa10n60T
IKa15n60T
IKa03n120H2
IGa03n120H2
SGP02n120
IKP03n120H2
IGP03n120H2
SGP07n120
IHP10T120
Type
Type
High Speed 2 IGBT Single version
High Speed 2 IGBT Duo Pack
Fast IGBT Duo Pack
Fast IGBT Duo Pack
Fast IGBT Single version
High Speed 2 IGBT Duo Pack
High Speed 2 IGBT Single version
Fast IGBT Single version
TrEnCHSToP
Fast IGBT Single version
TrEnCHSToP
Fast IGBT Duo Pack
TrEnCHSToP
TrEnCHSToP
High Speed 2 Duo Pack
High Speed 2 IGBT Single version
Technology
Technology
TM
TM
TM
TM
Duo Pack
Duo Pack
Duo Pack
Duo Pack