BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 9

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

ICs
Gate Driver
TDa21102/TDa21106
„
„
„
„
„
„
1) t
2) t
Gate Driver
Package
roHS-compliant
number of channels
Maximum junction temperature
Supply voltage, V
BooT to GnD
PHaSE to GnD DC
PHaSE to GnD dynamic
Switching frequency
Driving capability
-HS
Driving capability
-LS
Typical propagation delay time
Power on overvoltage protection
Integrated bootstrap diode
Product status
Drivers for n-Channel MoSFETs
Shoot-through protection–adaptive dead-time control
Tri-state PWM input
Supply voltage UvLo–Under voltage Lockout
Compatible with standard multiphase PWM controllers
adjustable high side MoSFET gate driver voltage
pulse max
pulse max
= 500ns, Maximum Duty Cycle = 2%
= 200ns
CC
-25 to 150°C
-20 ~ 30v
Source: 4a
Source: 4a
Production
TDa21106
10 ~ 20ns
-1 ~ 25v
Sink: 4a
Sink: 4a
2MHz
So-8
25v
45v


1
–
High Performance
1)
-25 to 150°C
Source: 4a
Source: 4a
Production
TDa21102
-20 ~ 30v
15 ~ 20ns
-1 ~ 25v
Sink: 4a
Sink: 4a
So-14
2MHz
25v
45v


2
–
1)
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