AO8807 Alpha & Omega Semiconductor Inc, AO8807 Datasheet

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AO8807

Manufacturer Part Number
AO8807
Description
MOSFET 2P-CH 12V 6.5A 8TSSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO8807

Input Capacitance (ciss) @ Vds
2100pF @ 6V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Power - Max
1.4W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1245-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO8807
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
AO8807L
Manufacturer:
TI
Quantity:
2 000
Part Number:
AO8807L
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO8807 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch. AO8807
and AO8807L are electrically identical.
- RoHS Compliant
-Halogen Free
AO8807
Dual P-Channel Enhancement Mode Field Effect Transistor
D1
S1
S1
G1
1
2
3
4
Top View
TSSOP-8
B
DS(ON)
C
T
T
T
T
A
A
A
A
8
7
6
5
=25°C
=70°C
=25°C
=70°C
, low gate charge and
D2
S2
S2
G2
A
AD
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
G1
STG
Symbol
Rg
Features
V
I
R
R
R
ESD Protected!
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -6.5 A (V
(V) = -12V
< 20mΩ (V
< 24mΩ (V
< 30mΩ (V
Maximum
-55 to 150
D1
S1
-6.5
Typ
-12
-60
1.4
0.9
±8
73
96
63
-5
GS
= -4.5V)
GS
GS
GS
G2
= -4.5V)
= -2.5V)
= -1.8V)
Max
125
90
75
Rg
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
°C
W
D2
S2
V
V
A

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AO8807 Summary of contents

Page 1

... General Description The AO8807 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant -Halogen Free TSSOP-8 Top View ...

Page 2

... AO8807 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO8807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -4.5V -2. (Volts) DS Figure 1: On-Region Characteristics(Note =-1. =-2. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) Alpha & Omega Semiconductor, Ltd - =-1. 1.6 1.4 V =-1.8V GS 1.2 1.0 V =-4. 1E+01 I =-6.5A D 1E+00 ...

Page 4

... AO8807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 =-6.5A D 3.5 3 2.5 2 1 (nC) g Figure 7: Gate-Charge Characteristics 100 R 10 DS(ON) limited 1 10s 0 T =150°C J(Max) T =25° 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA J,PK ...

Page 5

... AO8807 - VDC + Vgs Ig Vds Vgs Rg Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL Vds - DUT Vdd VDC + Vgs t d(on) Diode Recovery Test Circuit & Waveforms ...

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