AO8807 Alpha & Omega Semiconductor Inc, AO8807 Datasheet - Page 3

• Manufacturer Part Number: AO8807
• Description: MOSFET 2P-CH 12V 6.5A 8TSSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO8807

• Input Capacitance (ciss) @ Vds: 2100pF @ 6V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1245-2

AO8807
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45
40
35
30
25
20
15
10
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
0
0
0
0
Figure 3: On-Resistance vs. Drain Current and
-4.5V
Figure 1: On-Region Characteristics(Note E)
2
V
Figure 5: On-Resistance vs. Gate-Source
GS
=-2.5V
4
1
2
6
Gate Voltage(Note E)
-3V
Voltage(Note E)
8
2
-V
-V
V
DS
-I
GS
GS
D
-2.5V
10
(Volts)
=-1.5V
(A)
(Volts)
4
25°C
12
V
3
V
GS
125°C
GS
=-4.5V
=-1.8V
14
V
GS
=-1.5V
6
-2V
16
I
4
D
=-6.5A
18
20
5
8
1E+01
1E+00
60
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
1E-01
1E-02
1E-03
1E-04
1E-05
0
0
0
0.0
V
DS
Figure 2: Transfer Characteristics(Note E)
Figure 6: Body-Diode Characteristics(Note E)
I
=-5V
D
125°C
25
Figure 4: On-Resistance vs. Junction
0.5
=-6.5A, V
0.2
125°C
50
I
Temperature(Note E)
D
=-6A, V
GS
1
Temperature (°C)
=-4.5V
I
D
-V
=-5.5A, V
75
0.4
-V
GS
GS
SD
1.5
(Volts)
25°C
=-2.5V
25°C
(Volts)
100
GS
I
D
0.6
=-5A, V
=-1.8V
2
125
GS
0.8
=-1.5V
2.5
150
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175
1.0
3