AO8807 Alpha & Omega Semiconductor Inc, AO8807 Datasheet - Page 4

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AO8807

Manufacturer Part Number
AO8807
Description
MOSFET 2P-CH 12V 6.5A 8TSSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO8807

Input Capacitance (ciss) @ Vds
2100pF @ 6V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Power - Max
1.4W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1245-2

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AO8807
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
4.5
3.5
2.5
1.5
0.5
10
4
3
2
1
0
1
0
0
0.01
0
0.01
0.1
10
0.00001
R
limited
T
T
1
J(Max)
A
V
I
DS(ON)
D
=25°C
DS
=-6.5A
Figure 7: Gate-Charge Characteristics
=-6V
D=T
T
R
=150°C
Figure 9: Maximum Forward Biased Safe
J,PK
θJA
4
=125°C/W
on
0.1
=T
/T
A
+P
0.0001
Operating Area (Note F)
DM
8
.Z
V
-Q
10s
θJA
DS
g
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
.R
(Volts)
(nC)
1
θJA
12
0.001
DC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
16
Single Pulse
100µs
1s
10µs
1ms
0.1s
0.01
20
100
Pulse Width (s)
0.1
80
60
40
20
2800
2400
2000
1600
1200
0.0001
0
800
400
0
Figure 10: Single Pulse Power Rating Junction-to-
0
C
rss
0.001
1
Figure 8: Capacitance Characteristics
P
2
D
C
T
oss
0.01
on
Ambient (Note F)
Pulse Width (s)
4
T
10
-V
DS
0.1
C
(Volts)
6
iss
100
1
T
T
8
J(Max)
A
=25°C
=150°C
www.aosmd.com
10
10
1000
100
12

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