FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 2

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
Charakteristische Werte / Characteristic values
Diode / Diode
Technische Information / Technical Information
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
pro Zweig / per arm
I
I
I
V
V
I
V
V
I
V
V
C
C
C
C
C
C
F
F
F
F
F
P
GE
GE
GE
GE
GE
GE
GE
GE
Vj
R
R
R
R
R
R
G
G
= 800A, V
= 800A, V
= 800A, - di
= 800A, - di
= 800A, - di
FF 800 R 17 KF6C B2
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 900V, VGE = -10V, T
= 900V, VGE = -10V, T
= 900V, VGE = -10V, T
= 900V, VGE = -10V, T
= 900V, VGE = -10V, T
= 900V, VGE = -10V, T
= 1,2 , T
= 1,8 , T
125°C, V
10µsec, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
GE
GE
CE
CE
CE
CE
CE
CE
vj
vj
CC
F
F
F
GE
= 125°C, L
= 125°C, L
/dt =6300A/µsec
/dt = 6300A/µsec
/dt = 6300A/µsec
= 900V
= 900V
= 900V
= 900V
= 900V, V
= 900V, V
= 0V, T
= 0V, T
G
G
G
G
G
G
G
G
=1000V, V
= 1,2 , T
= 1,2 , T
= 1,8 , T
= 1,8 , T
= 1,2 , T
= 1,2 , T
= 1,8 , T
= 1,8 , T
15V
2(8)
vj
vj
= 25°C
= 125°C
GE
GE
S
S
CEmax
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= 60nH
= 60nH
= 15V
= 15V
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
=V
CES
-L
sCE
·dI/dt
R
CC´+EE´
L
t
t
E
E
E
I
d,off
I
V
d,on
Q
RM
t
SC
sCE
t
rec
on
off
r
f
F
r
min.
min.
3200
typ.
typ.
0,14
0,14
0,13
0,14
0,16
290
335
800
900
170
310
170
0,4
0,4
1,1
1,1
2,1
2,1
20
80
FF800R17KF6C B2
max.
max.
2,5
2,5
mWs
mWs
mWs
mWs
m
µAs
µAs
nH
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A