FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 8

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

Technische Information / Technical Information
IGBT-Module
FF 800 R 17 KF6C B2
IGBT-Modules
Äußere Abmessungen / external dimensions
8(8)
FF800R17KF6C B2