FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 7

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
1800
1600
1400
1200
1000
800
600
400
200
0
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
r
r
0
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
IC,Modul
IC,Chip
FF 800 R 17 KF6C B2
400
600
0,0287
0,027
1,88
15,7
1
0,1
7 (8)
800
V
0,0705
0,052
1000
CE
9,43
7,05
2
t [sec]
[V]
Z
thJC
1200
1
= f (t)
R
g
0,153
2,85
0,09
2,24
= 1,8 Ohm, T
3
1400
Zth:Diode
Zth:IGBT
vj
= 125°C
1600
10
0,838
0,988
5,84
9,05
4
1800
FF800R17KF6C B2
100