FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 4

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1800
1600
1400
1200
1000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
1,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
Tj = 25°C
Tj = 125°C
FF 800 R 17 KF6C B2
1,5
1,5
2,0
2,0
4(8)
V
V
2,5
CE
CE
2,5
[V]
[V]
3,0
3,0
V
I
GE
C
= f (V
= 15V
I
3,5
C
T
vj
3,5
= f (V
CE
= 125°C
)
4,0
CE
4,0
)
4,5
4,5
5,0
FF800R17KF6C B2
5,0