FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet

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FM2G75US60

Manufacturer Part Number
FM2G75US60
Description
IGBT Modules
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FM2G75US60

Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
75 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FM2G75US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FM2G75US60
Quantity:
55
©2000 Fairchild Semiconductor International
FM2G75US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control, UPS
and general inverters where short-circuit ruggedness is
required.
Features
• Short Circuit rated 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
T
P
T
T
V
Mounting
Torque
C
CM (1)
F
FM
stg
SC
J
CES
GES
D
iso
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
CE(sat)
C
= 100 C, V
= 2.2 V @ I
Description
GE
T
= 15V
C
C
= 75A
= 25 C unless otherwise noted
@ T
@ T
@ T
@ AC 1minute
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C1
Package Code : 7PM-AA
Internal Circuit Diagram
FM2G75US60
G1
-40 to +150
-40 to +125
E1
2500
600
150
150
310
2.0
2.0
75
75
10
20
E1/C2
G2
September 2000
E2
IGBT
E2
FM2G75US60 Rev. A
Units
N.m
N.m
us
W
V
V
A
A
A
A
V
C
C

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FM2G75US60 Summary of contents

Page 1

... Repetitive rating : Pulse width limited by max. junction temperature ©2000 Fairchild Semiconductor International = 15V 75A unless otherwise noted C Description @ 100 100 1minute September 2000 IGBT Package Code : 7PM-AA E1/ Internal Circuit Diagram FM2G75US60 Units 600 150 150 310 W -40 to +150 -40 to +125 2500 V 2.0 N.m 2.0 N.m FM2G75US60 Rev ...

Page 2

... V = 300 75A 3 15V -- G GE Inductive Load 125 300 15V 100 300 75A 15V GE -- Typ. Max. Units -- -- V 0 250 uA -- 100 nA -- 8.5 V 2.2 2.8 V 7056 -- pF 672 -- pF 180 -- 120 150 ns 87 200 175 -- ns 124 -- 310 350 130 -- nC FM2G75US60 Rev. A ...

Page 3

... Fairchild Semiconductor International unless otherwise noted C Test Conditions I = 75A 75A 150 A/us Parameter (Conductive grease applied) Min. Typ. Max 1.9 2 100 130 100 C -- 130 -- 100 315 590 100 C -- 650 -- C Typ. Max. -- 0.4 -- 0.9 0. 190 Units Units C/W C/W C/W g FM2G75US60 Rev. A ...

Page 4

... Fig 6. Saturation Voltage vs Common Emitter V = 15V 25℃ 125℃ Collector - Emitter Voltage 300V CC Load Current : peak of square wave Duty cycle : 50 100℃ Power Dissipation = 100W 1 10 100 Frequency [Khz] Common Emitter T = 125℃ C 150A 75A Ic = 40A Gate - Emitter Voltage 1000 20 FM2G75US60 Rev. A ...

Page 5

... Fig 12. Turn-Off Characteristics vs. = ± 15V = 300V 75A Ton = 25℃ = 125℃ Gate Resistance ± 15V = 300V 75A = 25℃ = 125℃ Eon Eoff 10 Gate Resistance ± 15V = 300V 3 25℃ 125℃ C Toff Collector Current, I [A] C Collector Current FM2G75US60 Rev. A 100 100 Tf 75 ...

Page 6

... CE Fig 18. Transient Thermal Impedance = 4 = 25℃ 300 V 200 100 100 150 200 250 300 Gate Charge Safe Operating Area 20V 100 100 Collector-Emitter Voltage 25℃ C IGBT : DIODE : - Rectangular Pulse Duration [sec] FM2G75US60 Rev. A 350 1000 1 10 ...

Page 7

... Common Cathode 25℃ C 160 T = 125℃ C 120 Forward Voltage, V Fig 19. Forward Characteristics ©2000 Fairchild Semiconductor International [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 150A/㎲ 25℃ 100℃ Forward Current, I [A] F FM2G75US60 Rev ...

Page 8

... Package Dimension 30$$ )6 3.* &2'( %' C2E1 0 ©2000 Fairchild Semiconductor International 5.4 Mounting Hole 3-M5 DP8.5 TAP Terminal -110(t0. 6.5 Dimensions in Millimeters FM2G75US60 Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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