FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet - Page 7

• Manufacturer Part Number: FM2G75US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FM2G75US60

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Fig 19. Forward Characteristics
200
160
120
80
40
0
0
Common Cathode
V
T
T
GE
C
C
= 25℃
= 125℃
= 0V
1
Forward Voltage, V
2
F
[V]
3
4
Fig 20. Reverse Recovery Characteristics
20
10
5
2
0
10
20
Forward Current, I
30
40
50
F
[A]
Common Cathode
di/dt = 150A/㎲
T
T
C
C
= 25℃
= 100℃
60
70
T
FM2G75US60 Rev. A
I
rr
rr
80