FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet - Page 6

• Manufacturer Part Number: FM2G75US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FM2G75US60

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
10000
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
Fig 17. RBSOA Characteristics
100
500
100
500
100
0.1
0.1
10
10
1
1
0.3
20
0
Eoff
Eon
Common Emitter
V
R
T
T
Eon
I
I
C
C
Single Nonrepetitive
Pulse T
V
R
CC
C
C
G
Single Nonrepetitive
Pulse T
Curves must be derated
linerarly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
GE
G
= 25℃
= 125℃
= 3.3
= 300V, V
= 3.3
= 15V
100
J
C
30
≤ 125℃
= 25℃
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
GE
1
200
= ± 15V
Collector Current, I
40
DC Operation
300
10
50
400
C
[A]
500
1㎳
60
CE
CE
100
[V]
[V]
100us
600
50us
70
Eoff
1000
700
75
Fig 16. Turn-Off SOA Characteristics
Fig 18. Transient Thermal Impedance
Fig 14. Gate Charge Characteristics
1E-3
0.01
100
0.1
15
12
10
9
6
3
0
1
1
10
0
1
-5
Common Emitter
R
T
C
L
= 25℃
= 4
50
10
-4
Collector-Emitter Voltage, V
Rectangular Pulse Duration [sec]
V
100
CC
Gate Charge, Qg [ nC ]
= 100 V
10
10
-3
150
10
-2
Safe Operating Area
V
200
GE
= 20V, T
100
10
-1
250
T
IGBT
DIODE :
200 V
CE
C
C
= 100
= 25℃
[V]
300 V
10
300
:
o
0
C
FM2G75US60 Rev. A
1000
350
10
1